Quasi-Fermi levels in MSM structureMAŁACHOWSKI, M. J; STEPNIEWSKI, J.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 820-823, issn 0038-1101Article

A precise scaling length for depleted regionsSCHRIMPF, R. D; WARNER, R. M. JR.Solid-state electronics. 1985, Vol 28, Num 8, pp 779-782, issn 0038-1101Article

Boundary element method for calculation of depletion layer profilesCUYPERS, F; DE MEY, G.Electronics Letters. 1984, Vol 20, Num 6, pp 229-230, issn 0013-5194Article

Theoretical calculations of Debye length, built-in potential and depletion layer width versus dopant density in a heavily doped p-n junction diodeTENG, K. W; LI, S. S.Solid-state electronics. 1985, Vol 28, Num 3, pp 277-285, issn 0038-1101Article

A new structure for in-depth history effect characterization on partially depleted SOI transistorsFAYNOT, O; POIROUX, T; CLUZEL, J et al.IEEE International SOI conference. 2002, pp 35-36, isbn 0-7803-7439-8, 2 p.Conference Paper

DIRECT OBSERVATION OF THE DEPLETION LAYER IN A MULTICHANNEL VERTICAL J.F.E.T. (M.J.F.E.T.).OGAWA H; ABE A; NAKAJIMA T et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 10; PP. 223-225; BIBL. 4 REF.Article

DEPLETION-LAYER CHARACTERISATION OF SINGLE-DIFFUSED P-N JUNCTIONS.BASAVARAJ TN; BHATTACHARYYA AB.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 765-767; BIBL. 11 REF.Article

EFFICIENCY ENHANCEMENT IN AVALANCHE DIODES BY DEPLETION-REGION-WIDTH MODULATION.BLAKEY PA; CULSHAW B; GIBLIN RA et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 21; PP. 435-436; BIBL. 3 REF.Article

MULTIPLICATION FACTORS AND BREAKDOWN VOLTAGES OF SILICON READ DIODES WITH WIDE DEPLETION REGIONS.BEHRENDT R.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 27; NO 2; PP. 489-498; ABS. ALLEM.; BIBL. 12 REF.Article

THE BURIED CHANNEL CHARGE COUPLED DEVICEWALDEN RH; KRAMBECK RH; STRAIN RJ et al.1972; BELL SYST. TECH. J.; U.S.A.; DA. 1972; VOL. 51; NO 7; PP. 1635-1640; BIBL. 9 REF.Serial Issue

TRANSITION-CAPACITANCE CALCULATIONS FOR DOUBLE-DIFFUSED P-N JUNCTIONSBHATTACHARYA AB; BASAVARAJ TN.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 467-476; BIBL. 31 REF.Serial Issue

DEPLETION WIDTHS OF THE METAL-INSULATOR SEMICONDUCTOR (MIS) STRUCTURECHEIN WEI JEN; CHUNG LEN LEE; TAN FU LEI et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 949-954; BIBL. 9 REF.Article

The dependence of effective channel width of quasi-one-dimensional split-gate devices on carrier densityDAS, B; MCGINNIS, S; MELLOCH, M. R et al.Microelectronics journal. 2000, Vol 31, Num 2, pp 117-121, issn 0959-8324Article

Hot-carrier-induced degradation on 0.1μm SOI CMOSFETYEH, Wen-Kuan; WANG, Wen-Han; FANG, Yean-Kuen et al.IEEE International SOI conference. 2002, pp 107-108, isbn 0-7803-7439-8, 2 p.Conference Paper

Capacitance measurements of p-n junctions: depletion layer and diffusion capacitance contributionsLUCIA, M. L; HERNANDEZ-ROJAS, J. L; LEON, C et al.European journal of physics. 1993, Vol 14, Num 2, pp 86-89, issn 0143-0807Article

Polymers at interfaces: adsorption and disjoining pressure theoriesCOHEN STUART, M. A.NATO ASI series. Series E, Applied sciences. 1987, Num 138, pp 229-240, issn 0168-132XConference Paper

Diffused junction effects in punch-through diodesDE COGAN, D; MALACHOWSKI, M. J.Solid-state electronics. 1985, Vol 28, Num 12, pp 1291-1292, issn 0038-1101Article

Determination of generation time and surface generation velocity from voltage step responses of current and capacitance on MOS capacitorSHIBATA, A; KITA, K.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1984, Vol 67, Num 1, pp 1-4, issn 0387-236XArticle

Electronic transport and depletion of quantum wells by tunneling through deep levels in semiconductor superlatticesCAPASSO, F; MOHAMMED, K; CHO, A. Y et al.Physical review letters. 1986, Vol 57, Num 18, pp 2303-2306, issn 0031-9007Article

Lateral photovoltaic effect in the weakly inverted and in the depleted MOS interface layersSHIKAWA, T; NIU, H; TAKAI, M et al.Japanese journal of applied physics. 1984, Vol 23, Num 10, pp 1314-1319, issn 0021-4922, 1Article

Measurement optical-absorption coefficient in the depletion region of GaAs Schottky-Barrier photodiodeHASEGAWA, S; TANAKA, A; SUKEGAWA, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 8, issn 0021-4922, 1152, 1Article

Accelerated formation of sodium depletion layer on soda lime glass surface by corona discharge treatment in hydrogen atmosphereKAWAGUCHI, Keiga; IKEDA, Hiroshi; SAKAI, Daisuke et al.Applied surface science. 2014, Vol 300, pp 149-153, issn 0169-4332, 5 p.Article

New insights on the hot-carrier characteristics of 55nm PD SOI MOSFETsIOANNOU, D. P; ZHAO, E; COOPER, S et al.IEEE international SOI conference. 2004, pp 205-206, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

Inherently planar fully depleted SOI isolationBURNS, J; COSTA, C; WARNER, K et al.IEEE International SOI conference. 2002, pp 103-104, isbn 0-7803-7439-8, 2 p.Conference Paper

Ultraviolet-radiation and skin cancer. Effect of an ozone layer depletionHENRIKSEN, T; DAHLBACK, A; LARSEN, S. H. H et al.Photochemistry and photobiology. 1990, Vol 51, Num 5, pp 579-582, issn 0031-8655Article